good agreement with the PC1D simulation except for a. The calculation using a two-diode model indicates that the recombination current for SE PERCs occurs in the depletion region of the pn-junction. Using two-diode model dark I-V curve fitting 7, it was revealed that the potential-induced shunt. The experiment results of the PERCs were modeled using the PC1D simulation program to calculate and compare the influence of the local contact pattern and SE structure on Voc. This confirms that the range of n++ regions should be narrower to increase Voc and reduce the Auger recombination, which is a dominant recombination mechanism. The improved Voc is due to a lower Auger and Shockley–Read–Hall recombination at the front surface of a cell, and the enhanced performance of the PERCs. In the rst example, we used a combination of PC1D and circuit model to simulate the eect of local shunts in a 2.4 Rigorous wave optical modelling silicon wafer solar cell. The decline in FF for SE PERC was due to the higher sheet resistance in the area for the n+ regions during the etch-back. Upon increasing the ratio of the n+/n++ regions from 5 to 13, the open-circuit voltage (Voc) increases considerably, except for the fill factor (FF). As a result, the SE structure had a considerable impact on the performance of the PERC cell.
The ratio of the n+/n++ regions was increased from a reference of 5 to ratios of 10 and 13, respectively, aiming to decrease the recombination losses at the front surface of the cell. An adjustment of the ratio of the n+/n++ regions can be achieved by modifying the areas between the unmasked and masked regions through screen-printing on an emitter. To produce the SE structure, screen-printed resist masking combined with wet chemical etch-back was introduced into the conventional PERC process. PC1D simulated dark and illuminated characteristics (reduced by Jsc ) for. This paper demonstrates an improvement of a passivated emitter and rear cell (PERC) with a selective emitter (SE) structure by modifying the ratio between lightly (n+) and highly doped (n++) emitters. Within this model, the voltage at the diode Vlo c represents the local voltage.
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